Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8 SiR626ADP-T1-RE3

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Subtotal (1 pack of 10 units)*

€17.06

(exc. VAT)

€20.98

(inc. VAT)

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  • Shipping from 11 January 2027
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Units
Per unit
Per Pack*
10 - 40€1.706€17.06
50 - 90€1.364€13.64
100 - 240€1.194€11.94
250 - 490€1.072€10.72
500 +€1.045€10.45

*price indicative

Packaging Options:
RS Stock No.:
204-7200
Mfr. Part No.:
SiR626ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

165A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiR626ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.75mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

83nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

6.25mm

Standards/Approvals

No

Length

5.26mm

Width

1.12 mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.

Package Power PAK SO-8

TrenchFET Gen IV power MOSFET

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