Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

€11.42

(exc. VAT)

€14.05

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90€1.142€11.42
100 - 240€1.109€11.09
250 - 490€1.051€10.51
500 - 990€1.007€10.07
1000 +€0.948€9.48

*price indicative

Packaging Options:
RS Stock No.:
210-5007
Mfr. Part No.:
SiR882BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

67.5A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR882BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83.3W

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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