Infineon OptiMOS Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 5000 units)*

€2,225.00

(exc. VAT)

€2,735.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +€0.445€2,225.00

*price indicative

RS Stock No.:
215-2472
Mfr. Part No.:
BSZ146N10LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Package Type

PQFN

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

8nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Low R DS(on) in small package

Low gate charge

Lower output charge

Logic level compatibility

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