Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1
- RS Stock No.:
- 215-2539
- Mfr. Part No.:
- IPP60R099P7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
€26.21
(exc. VAT)
€32.24
(inc. VAT)
In Stock
- 170 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | €5.242 | €26.21 |
| 25 - 45 | €4.404 | €22.02 |
| 50 - 120 | €4.142 | €20.71 |
| 125 - 245 | €3.828 | €19.14 |
| 250 + | €3.566 | €17.83 |
*price indicative
- RS Stock No.:
- 215-2539
- Mfr. Part No.:
- IPP60R099P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 31A Maximum Continuous Drain Current - IPP60R099P7XKSA1
This MOSFET is a high-voltage N-channel transistor designed for power-switching roles in through-hole assemblies. It operates over a wide temperature range and is intended for applications requiring substantial voltage handling and continuous current capability while mounted in a TO-220 package.
Features and Benefits:
• 600V drain-source rating enabling high-voltage switching
• 31A continuous drain current for sustained power delivery
• 99 mΩ low RDS(on) reducing conduction losses
• 117W power dissipation for heavy-load thermal handling
• 45 nC typical gate charge Qg enabling reasonable switching speed
• 20V gate-source limit supporting common drive voltages
• 31A continuous drain current for sustained power delivery
• 99 mΩ low RDS(on) reducing conduction losses
• 117W power dissipation for heavy-load thermal handling
• 45 nC typical gate charge Qg enabling reasonable switching speed
• 20V gate-source limit supporting common drive voltages
Applications
• Suitable for mains-side power conversion stages
• Ideal for switched-mode power supplies requiring 600V capability
• Used with heatsinked through-hole mounts in industrial units
• Can be used for high-voltage motor drive front-ends
• Suitable for power transistor roles in telecoms rectifiers
• Ideal for switched-mode power supplies requiring 600V capability
• Used with heatsinked through-hole mounts in industrial units
• Can be used for high-voltage motor drive front-ends
• Suitable for power transistor roles in telecoms rectifiers
What thermal extremes can it tolerate during operation?
It is rated to function from -55 °C up to 150 °C, allowing use in environments with wide temperature variation.
How many electrical connections does the package provide?
The device is supplied with three pins configured for the typical MOSFET gate, drain and source connections in a through-hole layout.
What mounting method does it require for circuit assembly?
The component is supplied in a TO-220 format intended for through-hole mounting and attachment to an external heatsink as needed.
What gate-drive considerations should be observed?
The maximum permissible gate-source voltage is 20V, so gate drivers should limit amplitude within that threshold to prevent device stress.
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
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- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1