Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement, 3-Pin TO-252

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€1,050.00

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€1,290.00

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3000 - 3000€0.35€1,050.00
6000 +€0.333€999.00

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RS Stock No.:
218-3105
Mfr. Part No.:
IRFR3410TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

2.39 mm

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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