N-Channel MOSFET Transistor & Diode, 9.4 A, 700 V, 3-Pin IPAK Infineon IPSA70R1K2P7SAKMA1

lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product