Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO

Subtotal (1 reel of 2500 units)*

€2,357.50

(exc. VAT)

€2,900.00

(inc. VAT)

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  • 2,500 unit(s) shipping from 07 January 2027
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Units
Per unit
Per Reel*
2500 +€0.943€2,357.50

*price indicative

RS Stock No.:
222-4623
Mfr. Part No.:
BSO604NS2XUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

55V

Package Type

DSO

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.7nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

3.94 mm

Standards/Approvals

No

Length

4.9mm

Height

1.47mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level

Enhancement Mode Green Product (RoHS compliant)

AEC Qualified

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