Infineon CoolMOS Type N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223

View all MOSFETs
Bulk discount available

Subtotal 125 units (supplied on a continuous strip)*

€46.00

(exc. VAT)

€56.625

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
125 - 225€0.368
250 - 600€0.348
625 - 1225€0.324
1250 +€0.299

*price indicative

Packaging Options:
RS Stock No.:
222-4687P
Mfr. Part No.:
IPN70R1K2P7SATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

700V

Package Type

SOT-223

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

4.8nC

Maximum Power Dissipation Pd

6.3W

Maximum Operating Temperature

150°C

Height

1.8mm

Length

6.7mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss) Integrated ESD protection diode

Excellent thermal behaviour

Related links