Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G

RS Stock No.:: 236-8962
Mfr. Part No.:: VP0106N3-G
Manufacturer:: Microchip

Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G

Bulk discount available

Subtotal (1 pack of 10 units)*

€9.30

(exc. VAT)

€11.40

(inc. VAT)

In Stock

70 unit(s) ready to ship from another location
Plus 680 unit(s) shipping from 09 January 2026

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Units	Per unit	Per Pack*
10 - 40	€0.93	€9.30
50 - 90	€0.779	€7.79
100 - 240	€0.704	€7.04
250 - 490	€0.692	€6.92
500 +	€0.678	€6.78

*price indicative

RS Stock No.:: 236-8962
Mfr. Part No.:: VP0106N3-G
Manufacturer:: Microchip

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	140A
	Maximum Drain Source Voltage Vds	30V
	Series	VP0106
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.6W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 140A
	Maximum Drain Source Voltage Vds 30V
	Series VP0106
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.6W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP0106N3-G

The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VP0106 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0106N3-G

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