Infineon IAUZ N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1

RS Stock No.:: 249-6897
Mfr. Part No.:: IAUZ30N06S5L140ATMA1
Manufacturer:: Infineon

Infineon IAUZ N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1

Subtotal (1 reel of 5000 units)*

€1,210.00

(exc. VAT)

€1,490.00

(inc. VAT)

Temporarily out of stock

Shipping from 31 May 2027

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Units	Per unit	Per Reel*
5000 +	€0.242	€1,210.00

*price indicative

RS Stock No.:: 249-6897
Mfr. Part No.:: IAUZ30N06S5L140ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PQFN
	Series	IAUZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Package Type PQFN
	Series IAUZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUZ30N06S5L140ATMA1

Infineon IAUZ Series MOSFET, 60V Maximum Drain‑Source Voltage, 30A Maximum Continuous Drain Current - IAUZ30N06S5L140ATMA1

This MOSFET is an N‑channel enhancement device designed for high‑current switching in Compact surface‑mount assemblies. It operates across a wide thermal range and is built for demanding environments where low conduction loss and substantial power handling are required.

Features and Benefits:

• 14mΩ Rds(on) reduces conduction losses for efficient power delivery
• 81W power dissipation supports sustained high‑power operation
• 80nC typical gate charge enables controlled switching with moderate drive energy
• 20V gate tolerance allows use with higher‑voltage gate‑drive circuits
• PQFN package improves the thermal path for surface‑mounted assemblies

Applications

• Suitable for 60V automotive power‑distribution circuits
• Ideal for high‑current DC-DC converters in vehicles
• Used with motor‑drive stages in automotive electronics
• Can be used for switch‑mode power supplies requiring Compact mounting
• Suitable for high‑temperature control electronics in harsh environments

What temperature range can it sustain in operation?

It is rated to function from -55°C up to 175°C.

How does the package support thermal management?

The PQFN form provides a direct thermal route to the PCB for improved heat transfer.

What gate‑drive considerations apply for switching?

Expect a typical gate charge of 80nC at the specified gate voltage, requiring a driver capable of sourcing that charge for Rapid transitions.

Which mounting method is intended for installation?

It is designed for surface‑mount placement on PCB assemblies.