MPN

Infineon IMBG Type N-Channel MOSFET, 18 A, 1200 V N, 7-Pin TO-263

RS Stock No.:: 249-6953
Mfr. Part No.:: IMBG120R220M1HXTMA1
Manufacturer:: Infineon

Infineon IMBG Type N-Channel MOSFET, 18 A, 1200 V N, 7-Pin TO-263

Subtotal (1 reel of 1000 units)*

€2,880.00

(exc. VAT)

€3,540.00

(inc. VAT)

Temporarily out of stock

Shipping from 29 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	€2.88	€2,880.00

*price indicative

RS Stock No.:: 249-6953
Mfr. Part No.:: IMBG120R220M1HXTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-263
	Series	IMBG
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-263
	Series IMBG
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMBG120R220M1HXTMA1

The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.

Very low switching losses

Short circuit withstand time 3 μs

Fully controllable dV/dt

Benchmark gate threshold voltage, VGS(th) = 4.5V

Robust against parasitic turn on, 0V turn-off gate voltage can be applied

Robust body diode for hard commutation

XT interconnection technology for best-in-class thermal performance

Package creepage and clearance distance > 6.1mm

Sense pin for optimized switching performance

Infineon IMBG Type N-Channel MOSFET, 18 A, 1200 V N, 7-Pin TO-263

Related links