Infineon HEXFET N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF
- RS Stock No.:
- 257-9437
- Mfr. Part No.:
- IRFS7530TRLPBF
- Manufacturer:
- Infineon
Subtotal (1 reel of 800 units)*
€1,161.60
(exc. VAT)
€1,428.80
(inc. VAT)
Temporarily out of stock
- Shipping from 11 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | €1.452 | €1,161.60 |
*price indicative
- RS Stock No.:
- 257-9437
- Mfr. Part No.:
- IRFS7530TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET N-Channel MOSFET 60 V TO-263 IRFS7530TRLPBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262
- Infineon HEXFET N-Channel MOSFET 60 V TO-220
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- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-263
- Infineon HEXFET N-Channel MOSFET 75 V TO-263
