Infineon BSZ Type P-Channel MOSFET, -40 A, -30 V P, 8-Pin TDSON BSZ120P03NS3GATMA1
- RS Stock No.:
- 258-0719
- Mfr. Part No.:
- BSZ120P03NS3GATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
€4.01
(exc. VAT)
€4.93
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | €0.802 | €4.01 |
| 50 - 120 | €0.706 | €3.53 |
| 125 - 245 | €0.658 | €3.29 |
| 250 - 495 | €0.61 | €3.05 |
| 500 + | €0.568 | €2.84 |
*price indicative
- RS Stock No.:
- 258-0719
- Mfr. Part No.:
- BSZ120P03NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -40A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | BSZ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -40A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series BSZ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Enhancement mode
Normal level, logic level or super logic level
Avalanche rated
Pb-free lead plating; RoHS compliant