Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC IRF7606TRPBF

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Subtotal (1 pack of 25 units)*

€10.10

(exc. VAT)

€12.425

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100€0.404€10.10
125 - 225€0.384€9.60
250 - 600€0.368€9.20
625 - 1225€0.242€6.05
1250 +€0.182€4.55

*price indicative

Packaging Options:
RS Stock No.:
262-6742
Mfr. Part No.:
IRF7606TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-3.6A

Maximum Drain Source Voltage Vds

-30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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