Infineon OptiMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3 IPD046N08N5ATMA1

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Subtotal (1 reel of 2500 units)*

€2,762.50

(exc. VAT)

€3,397.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +€1.105€2,762.50

*price indicative

RS Stock No.:
273-2783
Mfr. Part No.:
IPD046N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET is a N channel 80V MOSFET. It is an ideal for high frequency switching and synchronous rectification. This MOSFET has 175 degree Celsius operating temperature. This MOSFET qualified according to JEDEC1 for target application and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance

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