Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS Stock No.:
- 273-7553
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
€6.98
(exc. VAT)
€8.585
(inc. VAT)
In Stock
- 480 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | €1.396 | €6.98 |
| 10 - 20 | €1.234 | €6.17 |
| 25 - 95 | €1.212 | €6.06 |
| 100 - 245 | €0.986 | €4.93 |
| 250 + | €0.976 | €4.88 |
*price indicative
- RS Stock No.:
- 273-7553
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPP18P06P-H | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81.1W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.33V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Length | 40mm | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-41-690 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPP18P06P-H | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81.1W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.33V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Width 40 mm | ||
Length 40mm | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-41-690 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
Related links
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