onsemi P-Channel MOSFET, 5.4 A, 60 V, 3-Pin DPAK FQD7P06TM
- RS Stock No.:
- 671-1030
- Mfr. Part No.:
- FQD7P06TM
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
€3.67
(exc. VAT)
€4.52
(inc. VAT)
40 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Real time stock check
Units | Per unit | Per Pack** |
---|---|---|
5 - 45 | €0.734 | €3.67 |
50 - 95 | €0.632 | €3.16 |
100 - 495 | €0.548 | €2.74 |
500 - 995 | €0.482 | €2.41 |
1000 + | €0.438 | €2.19 |
**price indicative
- RS Stock No.:
- 671-1030
- Mfr. Part No.:
- FQD7P06TM
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 5.4 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 451 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Width | 6.22mm | |
Maximum Operating Temperature | +150 °C | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 6.3 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.4 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 451 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 6.3 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Related links
- P-Channel MOSFET 60 V, 3-Pin DPAK onsemi FQD17P06TM
- P-Channel MOSFET 60 V, 3-Pin DPAK onsemi FQD11P06TM
- P-Channel MOSFET 60 V, 3-Pin DPAK onsemi NTD2955T4G
- P-Channel MOSFET 60 V, 3-Pin DPAK onsemi NTD20P06LT4G
- P-Channel MOSFET 40 V, 3-Pin DPAK onsemi FDD4141
- P-Channel MOSFET 30 V, 3-Pin DPAK onsemi NTD25P03LT4G
- P-Channel MOSFET 100 V, 3-Pin DPAK onsemi FQD8P10TM
- P-Channel MOSFET 40 V, 3-Pin DPAK onsemi FDD4243