Essential and Operational Technologies

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Units	Per unit	Per Pack**
2 - 18	€2.195	€4.39
20 - 48	€1.89	€3.78
50 - 98	€1.76	€3.52
100 - 198	€1.65	€3.30
200 +	€1.52	€3.04

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	25 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	73 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	14 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10.67mm
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Width	4.83mm
	Maximum Operating Temperature	+175 °C
	Height	9.02mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 25 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 73 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 14 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10.67mm
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Width 4.83mm
	Maximum Operating Temperature +175 °C
	Height 9.02mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 25 A, 200 V, 3-Pin TO-220AB IRFB5620PBF

Digital Audio MOSFET, Infineon

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