Dual N-Channel MOSFET, 26 A, 30 V, 8-Pin Power 33 onsemi FDPC8013S
- RS Stock No.:
- 774-1180
- Mfr. Part No.:
- FDPC8013S
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)**
€2.97
(exc. VAT)
€3.65
(inc. VAT)
Temporarily out of stock - back order for despatch 12-06-2025, delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Pack** |
|---|---|---|
| 2 - 18 | €1.485 | €2.97 |
| 20 - 198 | €1.28 | €2.56 |
| 200 - 998 | €1.11 | €2.22 |
| 1000 - 1998 | €0.975 | €1.95 |
| 2000 + | €0.885 | €1.77 |
**price indicative
- RS Stock No.:
- 774-1180
- Mfr. Part No.:
- FDPC8013S
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 26 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | Power 33 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.2 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.4mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type Power 33 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.2 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.4mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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