IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 15 A, 1 kV Enhancement, 3-Pin TO-247 IXFH15N100Q3
- RS Stock No.:
- 801-1389
- Distrelec Article No.:
- 302-53-309
- Mfr. Part No.:
- IXFH15N100Q3
- Manufacturer:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 801-1389
- Distrelec Article No.:
- 302-53-309
- Mfr. Part No.:
- IXFH15N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Transistor Configuration | Single | |
| Series | HiperFET, Q3-Class | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 15 A | |
| Maximum Drain Source Voltage (Vds) | 1 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253309 | |
| Forward Voltage (Vf) | 1.4 V | |
| Height | 16.26 mm | |
| Length | 16.26 mm | |
| Maximum Drain Source Resistance (Rds) | 1.05 Ω | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 690 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 64 nC | |
| Width | 5.3 mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Transistor Configuration Single | ||
Series HiperFET, Q3-Class | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 15 A | ||
Maximum Drain Source Voltage (Vds) 1 kV | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Distrelec Product Id 30253309 | ||
Forward Voltage (Vf) 1.4 V | ||
Height 16.26 mm | ||
Length 16.26 mm | ||
Maximum Drain Source Resistance (Rds) 1.05 Ω | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 690 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 64 nC | ||
Width 5.3 mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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