Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	39 A
	Maximum Drain Source Voltage	600 V
	Series	TK
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Maximum Power Dissipation	270 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	5.02mm
	Length	15.94mm
	Typical Gate Charge @ Vgs	110 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Height	20.95mm

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 39 A
	Maximum Drain Source Voltage 600 V
	Series TK
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Maximum Power Dissipation 270 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 5.02mm
	Length 15.94mm
	Typical Gate Charge @ Vgs 110 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Height 20.95mm

Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

MOSFET N-Channel, TK3x Series, Toshiba

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