STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247

Subtotal (1 tube of 30 units)*

€390.06

(exc. VAT)

€479.76

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 840 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 +€13.002€390.06

*price indicative

RS Stock No.:
201-0859
Mfr. Part No.:
SCTW35N65G2V
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTW35

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

240W

Maximum Operating Temperature

200°C

Height

15.75mm

Length

14.8mm

Standards/Approvals

No

Width

5.15 mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitance