N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220AB Infineon IRFZ44NPBF

RS Stock No.:: 919-4769
Mfr. Part No.:: IRFZ44NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220AB Infineon IRFZ44NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

€43.05

(exc. VAT)

€52.95

(inc. VAT)

1000 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 - 50	€0.861	€43.05
100 - 200	€0.706	€35.30
250 - 450	€0.654	€32.70
500 - 1200	€0.611	€30.55
1250 +	€0.568	€28.40

**price indicative

RS Stock No.:: 919-4769
Mfr. Part No.:: IRFZ44NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

Is it compatible with standard PCB designs?

Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	49 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	17.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	94 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	63 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	8.77mm