onsemi 100V 2A, Schottky Diode, 2-Pin DO-41 MBR1100G

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard-Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
High Surge Capacity
Mechanical Characteristics:
Case: Epoxy, Moulded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily solder able
Lead Temperature for Soldering Purposes: 260°C Max. For 10 Seconds
Shipped in plastic bags, 1000 per bag
Polarity: Cathode Indicated by Polarity Band
Marking: B1100
These are Pb-Free Devices