STMicroelectronics 1200V 20A, SiC Schottky Rectifier & Schottky Diode, 2-Pin DO-247 LL STPSC20G12WL

The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn off behaviour is independent of temperature.

None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Avalanche energy rated