Infineon AIKW40N65DF5XKSA1, N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6617
- Mfr. Part No.:
- AIKW40N65DF5XKSA1
- Manufacturer:
- Infineon
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€99.72
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€122.67
(inc. VAT)
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 30 | €3.324 | €99.72 | - |
| 60 - 120 | €3.191 | €95.73 | 4% |
| 150 + | €2.872 | €86.16 | 13% |
*price indicative
- RS Stock No.:
- 215-6617
- Mfr. Part No.:
- AIKW40N65DF5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Standards/Approvals | AEC-Q101 | |
| Series | TrenchStop | |
| Length | 42mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Height 5.21mm | ||
Standards/Approvals AEC-Q101 | ||
Series TrenchStop | ||
Length 42mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon high speed F5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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