STMicroelectronics STN N-Channel MOSFET, 1 A, 200 V Enhancement, 4-Pin SOT-223 STN4NF20L
- RS Stock No.:
- 151-425
- Mfr. Part No.:
- STN4NF20L
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 20 units)*
€10.62
(exc. VAT)
€13.06
(inc. VAT)
In Stock
- 2,600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | €0.531 | €10.62 |
| 200 - 980 | €0.331 | €6.62 |
| 1000 - 1980 | €0.252 | €5.04 |
| 2000 + | €0.226 | €4.52 |
*price indicative
- RS Stock No.:
- 151-425
- Mfr. Part No.:
- STN4NF20L
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-223 | |
| Series | STN | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-223 | ||
Series STN | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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