STMicroelectronics SCT MOSFET, 55 A, 1200 V H2PAK-7
- RS Stock No.:
- 365-166
- Mfr. Part No.:
- SCT025H120G3-7
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
€26.27
(exc. VAT)
€32.31
(inc. VAT)
Temporarily out of stock
- Shipping from 29 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | €26.27 |
| 10 - 99 | €23.64 |
| 100 + | €21.80 |
*price indicative
- RS Stock No.:
- 365-166
- Mfr. Part No.:
- SCT025H120G3-7
- Manufacturer:
- STMicroelectronics
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Related links
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 7-Pin H2PAK
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 7-Pin H2PAK SCTW100N65G2AG
- STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- STMicroelectronics SCT025H120G3AG Type N 55 A 7-Pin H2PAK-7 SCT025H120G3AG