STMicroelectronics ST8L65 Type N-Channel Single MOSFETs, 58 A, 650 V Enhancement, 5-Pin PowerFLAT ST8L65N044M9

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RS Stock No.:
648-109
Mfr. Part No.:
ST8L65N044M9
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

650V

Series

ST8L65

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Maximum Power Dissipation Pd

166W

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.95mm

Length

8.10mm

Width

8.10 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. It has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Excellent switching performance

Easy to drive

100 percent avalanche tested

Excellent switching performance

PowerFLAT 8x8 HV package

RoHS compliant

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