Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

RS Stock No.:: 653-188
Mfr. Part No.:: SQS201CENW-T1_GE3
Manufacturer:: Vishay

Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

Subtotal (1 reel of 3000 units)*

€1,446.00

(exc. VAT)

€1,779.00

(inc. VAT)

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Units	Per unit	Per Reel*
3000 +	€0.482	€1,446.00

*price indicative

RS Stock No.:: 653-188
Mfr. Part No.:: SQS201CENW-T1_GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-16A
	Maximum Drain Source Voltage Vds	100V
	Series	SQS201CENW
	Package Type	PowerPAK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0800Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	26nC
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	62.5W
	Maximum Operating Temperature	175°C
	Length	3.30mm
	Height	0.41mm
	Width	3.30mm
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id -16A
	Maximum Drain Source Voltage Vds 100V
	Series SQS201CENW
	Package Type PowerPAK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0800Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 26nC
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 62.5W
	Maximum Operating Temperature 175°C
	Length 3.30mm
	Height 0.41mm
	Width 3.30mm
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - SQS201CENW-T1_GE3

COO (Country of Origin):: CN

Vishay SQS201CENW Series Single MOSFETs, -100V Maximum Drain Source Voltage, -16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3

This single MOSFET is a P-channel enhancement device intended for power-switching functions in electronic systems, particularly where automotive-grade robustness is required. It is designed for PCB mounting in a PowerPAK package and offers a balance of current handling and voltage capability suited to demanding industrial and vehicular control environments.

Features and Benefits:

• P-channel device enabling high-side switching in circuits • 100V drain-to-source rating allowing large voltage margins • -16A continuous drain current for substantial load capability • 0.08Ω Rds(on) minimising conduction losses under load • 26nC typical gate charge supporting moderate switching speeds • 62.5W power dissipation handling significant thermal stress

Applications

• Suitable for high-side power switching in automotive modules • Ideal for motor-drive protection and control circuits • Used for battery management and power distribution systems • Can be used for industrial automation logic-level power stages

What gate voltage limits should be observed during design?

The gate-to-source excursion must not exceed 20V to prevent device stress.

How does the device behave at temperature extremes in practice?

It is specified to operate from -55°C up to 175°C, enabling use in harsh thermal environments without exceeding its rated limits.

What package considerations affect PCB layout and cooling?

The PowerPAK 8-pin footprint influences thermal conduction paths and requires adequate PCB copper for heat dissipation to make use of the 62.5W power-handling capacity.

Are there specific standards influencing selection for automotive use?

It meets the AEC‑Q101 automotive qualification, indicating suitability for vehicle electronic applications under that standard.