DiodesZetex Isolated 2 Type N, Type N, Type P, Type P-Channel MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC ZXMC4559DN8TA
- RS Stock No.:
- 122-3286
- Mfr. Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- DiodesZetex
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 122-3286
- Mfr. Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Transistor Configuration | Isolated | |
| Number of Elements per Chip | 2 | |
| Channel Type | Type N, Type N, Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 4.7 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Automotive Standard | AEC-Q101 | |
| Forward Voltage (Vf) | 850 mV | |
| Height | 1.5 mm | |
| Length | 4.95 mm | |
| Maximum Drain Source Resistance (Rds) | 75 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 2.1 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 11 nC | |
| Width | 3.95 mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Transistor Configuration Isolated | ||
Number of Elements per Chip 2 | ||
Channel Type Type N, Type N, Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 4.7 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type SOIC | ||
Automotive Standard AEC-Q101 | ||
Forward Voltage (Vf) 850 mV | ||
Height 1.5 mm | ||
Length 4.95 mm | ||
Maximum Drain Source Resistance (Rds) 75 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 2.1 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 11 nC | ||
Width 3.95 mm | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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