N-Channel MOSFET, 107 A, 40 V, 8-Pin WDFN onsemi NTTFS5C453NLTAG
- RS Stock No.:
- 163-2694
- Mfr. Part No.:
- NTTFS5C453NLTAG
- Manufacturer:
- onsemi
Subtotal (1 reel of 1500 units)**
€600.00
(exc. VAT)
€735.00
(inc. VAT)
Stock check temporarily unavailable - call for stock availability
Units | Per unit | Per Reel** |
|---|---|---|
| 1500 + | €0.40 | €600.00 |
**price indicative
- RS Stock No.:
- 163-2694
- Mfr. Part No.:
- NTTFS5C453NLTAG
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 107 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | WDFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 3.15mm | |
| Width | 3.15mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 107 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type WDFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 35 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 3.15mm | ||
Width 3.15mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
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