DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 200 mA, 60 V Enhancement, 6-Pin SC-88
- RS Stock No.:
- 165-8845
- Mfr. Part No.:
- DMN65D8LDW-7
- Manufacturer:
- DiodesZetex
Subtotal (1 reel of 3000 units)*
€171.00
(exc. VAT)
€210.00
(inc. VAT)
In Stock
- 81,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | €0.057 | €171.00 |
*price indicative
- RS Stock No.:
- 165-8845
- Mfr. Part No.:
- DMN65D8LDW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.43nC | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 2.2mm | |
| Standards/Approvals | RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.43nC | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 2.2mm | ||
Standards/Approvals RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 | ||
Width 1.35 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 DMN65D8LDW-7
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DW
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 NTJD5121NT1G
- Nexperia Dual N-Channel MOSFET 60 V115
- Toshiba Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 SSM6N7002KFU
- Nexperia Dual N-Channel MOSFET 60 V115
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DW-7-F
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 DMN66D0LDW-7