STMicroelectronics STD5N Type N-Channel MOSFET, 3.5 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

€1,137.50

(exc. VAT)

€1,400.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +€0.455€1,137.50

*price indicative

RS Stock No.:
193-5388
Mfr. Part No.:
STD5N60DM2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

STD5N

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.55Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.3nC

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

6.6mm

Width

6.2 mm

Standards/Approvals

No

Height

2.2mm

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

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