Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR540Z

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€20.75

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€25.52

(inc. VAT)

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10 - 40€2.075€20.75
50 - 90€1.972€19.72
100 - 240€1.775€17.75
250 +€1.766€17.66

*price indicative

Packaging Options:
RS Stock No.:
214-8953
Mfr. Part No.:
AUIRFR540Z
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

91W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.39mm

Width

6.73 mm

Length

6.22mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

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