Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IRFR540ZTRPBF

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Subtotal (1 pack of 20 units)*

€20.22

(exc. VAT)

€24.88

(inc. VAT)

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Per Pack*
20 - 80€1.011€20.22
100 - 180€0.961€19.22
200 - 480€0.92€18.40
500 - 980€0.88€17.60
1000 +€0.819€16.38

*price indicative

Packaging Options:
RS Stock No.:
215-2599
Mfr. Part No.:
IRFR540ZTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

91W

Typical Gate Charge Qg @ Vgs

59nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free and Halogen-Free

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