Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	56 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	16 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Transistor Material	Silicon
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 56 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 16 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Transistor Material Silicon
	Number of Elements per Chip 1

Infineon HEXFET Silicon N-Channel MOSFET, 56 A, 55 V, 3-Pin DPAK IRFR2405TRPBF

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