Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 15 units)*

€15.54

(exc. VAT)

€19.11

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 9,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 60€1.036€15.54
75 - 135€0.984€14.76
150 - 360€0.943€14.15
375 - 735€0.901€13.52
750 +€0.839€12.59

*price indicative

Packaging Options:
RS Stock No.:
229-1833
Mfr. Part No.:
IPD50N08S413ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

72W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Length

6.5mm

Height

2.3mm

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

Related links