onsemi UniFET II Type N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- RS Stock No.:
- 229-6327
- Mfr. Part No.:
- FDT4N50NZU
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
€9.38
(exc. VAT)
€11.54
(inc. VAT)
In Stock
- Plus 2,710 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | €0.938 | €9.38 |
| 100 - 240 | €0.809 | €8.09 |
| 250 - 490 | €0.701 | €7.01 |
| 500 - 990 | €0.617 | €6.17 |
| 1000 + | €0.56 | €5.60 |
*price indicative
- RS Stock No.:
- 229-6327
- Mfr. Part No.:
- FDT4N50NZU
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET II | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET II | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
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