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onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1

RS Stock No.:: 229-6444
Mfr. Part No.:: NTBG045N065SC1
Manufacturer:: onsemi

onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1

Bulk discount available

Subtotal (1 unit)*

€11.44

(exc. VAT)

€14.07

(inc. VAT)

In Stock

728 unit(s) ready to ship from another location

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Units	Per unit
1 - 9	€11.44
10 - 99	€9.85
100 - 499	€8.54
500 +	€7.51

*price indicative

RS Stock No.:: 229-6444
Mfr. Part No.:: NTBG045N065SC1
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	SiC Power
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	N
	Forward Voltage Vf	4.8V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	242W
	Typical Gate Charge Qg @ Vgs	105nC
	Maximum Operating Temperature	175°C
	Height	9.4mm
	Width	4.7 mm
	Length	10.2mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series SiC Power
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode N
	Forward Voltage Vf 4.8V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 242W
	Typical Gate Charge Qg @ Vgs 105nC
	Maximum Operating Temperature 175°C
	Height 9.4mm
	Width 4.7 mm
	Length 10.2mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - NTBG045N065SC1

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency

Faster operation frequency

Increased power density

Reduced EMI

Reduced system size

onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1

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