Infineon ISP Type P-Channel MOSFET, 1.55 A, 100 V Enhancement, 3-Pin SOT-223 ISP98DP10LMXTSA1
- RS Stock No.:
- 235-4881
- Mfr. Part No.:
- ISP98DP10LMXTSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
€1.57
(exc. VAT)
€1.93
(inc. VAT)
In Stock
- Plus 740 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | €0.157 | €1.57 |
| 100 - 240 | €0.149 | €1.49 |
| 250 - 490 | €0.143 | €1.43 |
| 500 - 990 | €0.137 | €1.37 |
| 1000 + | €0.127 | €1.27 |
*price indicative
- RS Stock No.:
- 235-4881
- Mfr. Part No.:
- ISP98DP10LMXTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.55A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 4.2W | |
| Maximum Operating Temperature | 175°C | |
| Length | 7.3mm | |
| Height | 6.7mm | |
| Width | 1.8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.55A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 4.2W | ||
Maximum Operating Temperature 175°C | ||
Length 7.3mm | ||
Height 6.7mm | ||
Width 1.8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
Related links
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP98DP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 150 V, 3-Pin SOT-223 ISP14EP15LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP16DP10LMXTSA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin SOT-223 ISP20EP10LMXTSA1
- Infineon SIPMOS® P-Channel MOSFET Transistor 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1
- Infineon P-Channel MOSFET Transistor 60 V, 3-Pin SOT-23 ISS17EP06LMXTSA1
- Infineon P-Channel MOSFET Transistor 60 V, 3-Pin SOT-23 ISS55EP06LMXTSA1
- Infineon N-Channel MOSFET Transistor 500 V, 3-Pin SOT-223 IPN50R2K0CEATMA1