Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1

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Subtotal (1 pack of 2 units)*

€2.33

(exc. VAT)

€2.866

(inc. VAT)

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Per Pack*
2 - 18€1.165€2.33
20 - 48€1.045€2.09
50 - 98€0.97€1.94
100 - 198€0.905€1.81
200 +€0.84€1.68

*price indicative

Packaging Options:
RS Stock No.:
258-3833
Mfr. Part No.:
IPD122N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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