Infineon BSZ12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin PG-TSDSON-8

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Subtotal (1 pack of 5 units)*

€30.77

(exc. VAT)

€37.845

(inc. VAT)

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5 - 45€6.154€30.77
50 - 495€5.136€25.68
500 - 995€4.394€21.97
1000 - 2495€4.316€21.58
2500 +€4.236€21.18

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RS Stock No.:
273-5250
Mfr. Part No.:
BSZ12DN20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSZ12DN20NS3 G

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

6.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, JEDEC1

Width

40 mm

Length

40mm

Height

1.5mm

Automotive Standard

No

The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and 150 degree Celsius operating temperature. It is a optimized for dc to dc conversion.

Halogen free

RoHS compliant

Pb free lead plating

Very low on resistance

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