Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF

RS Stock No.:: 650-4867
Mfr. Part No.:: IRLU3110ZPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF

Discontinued product

RS Stock No.:: 650-4867
Mfr. Part No.:: IRLU3110ZPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 63A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLU3110ZPBF

This high-performance MOSFET is designed for industrial applications, showcasing impressive capabilities for automation and electrical systems. Its enhancement mode transistor structure enhances efficiency and utilises modern processing techniques to deliver effective results. The specifications make it essential for users seeking reliable performance in varied environments.

Features & Benefits

• Ultra low RDS(on) for improved energy efficiency
• Supports high continuous drain current up to 63A
• Maximum drain-source voltage rated at 100V
• Exceptional thermal stability with a maximum operating temperature of +175°C
• Fast switching speeds enhance system responsiveness
• Resistant to repetitive avalanche conditions for further reliability

Applications

• Utilised in power electronic converters
• Suitable for motor control systems
• Ideal for switching regulators and inverters
• Employed in circuits requiring high current handling
• Utilised in power management systems within industrial equipment

What are the ideal operating conditions for this MOSFET?

It operates efficiently between -55°C and +175°C, providing versatility in extreme conditions.

How does the RDS(on) impact efficiency?

The ultra low RDS(on) reduces power loss during operation, leading to decreased heat generation and enhanced circuit efficiency.

Can it be used in high-frequency applications?

Yes, the fast switching capabilities allow for use in high-frequency environments while maintaining performance.

What is the significance of the peak gate-source voltage?

The maximum gate-source voltage of ±16V ensures safe operation and prevents breakdown in gate oxide, protecting the transistor's integrity.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	63 A
Maximum Drain Source Voltage	100 V
Package Type	IPAK (TO-251)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	2.3mm
Typical Gate Charge @ Vgs	34 nC @ 4.5 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Length	6.6mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	6.1mm
Forward Diode Voltage	1.3V