STMicroelectronics STripFET N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP80NF06
- RS Stock No.:
- 687-5324
- Mfr. Part No.:
- STP80NF06
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)*
€2.85
(exc. VAT)
€3.506
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €1.425 | €2.85 |
| 10 - 18 | €1.34 | €2.68 |
| 20 - 48 | €1.27 | €2.54 |
| 50 - 98 | €1.195 | €2.39 |
| 100 + | €1.145 | €2.29 |
*price indicative
- RS Stock No.:
- 687-5324
- Mfr. Part No.:
- STP80NF06
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | STripFET | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 115 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -65 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 115 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Transistor Material Si | ||
Height 9.15mm | ||
Minimum Operating Temperature -65 °C | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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