Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 688-7216
- Mfr. Part No.:
- IRLB4030PBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
€7.24
(exc. VAT)
€8.90
(inc. VAT)
In Stock
- 66 unit(s) ready to ship from another location
- Plus 494 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | €3.62 | €7.24 |
| 20 - 48 | €3.08 | €6.16 |
| 50 - 98 | €2.90 | €5.80 |
| 100 - 198 | €2.675 | €5.35 |
| 200 + | €2.495 | €4.99 |
*price indicative
- RS Stock No.:
- 688-7216
- Mfr. Part No.:
- IRLB4030PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 370W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Width | 4.83 mm | |
| Distrelec Product Id | 304-35-447 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 370W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Width 4.83 mm | ||
Distrelec Product Id 304-35-447 | ||
Automotive Standard No | ||
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRLB4030PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4110PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4110GPBF
- Infineon HEXFET N-Channel MOSFET 100 V D2PAK IRLS4030TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRFS4010TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP4110PBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-220AB IRF1404ZPBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220AB IRFB3207PBF