N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON Infineon BSZ067N06LS3GATMA1
- RS Stock No.:
- 754-5364
- Mfr. Part No.:
- BSZ067N06LS3GATMA1
- Manufacturer:
- Infineon
Subtotal (1 tape of 5 units)**
€1.59
(exc. VAT)
€1.96
(inc. VAT)
19900 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Tape** |
|---|---|---|
| 5 + | €0.318 | €1.59 |
**price indicative
- RS Stock No.:
- 754-5364
- Mfr. Part No.:
- BSZ067N06LS3GATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TSDSON | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 23 nC @ 4.5 V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TSDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 3.4mm | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 23 nC @ 4.5 V | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- N-Channel MOSFET 60 V, 8-Pin TSDSON Infineon BSZ067N06LS3GATMA1
- N-Channel MOSFET 60 V, 8-Pin TSDSON Infineon BSZ110N06NS3GATMA1
- N-Channel MOSFET 60 V, 8-Pin TSDSON Infineon IAUZ40N06S5L050ATMA1
- N-Channel MOSFET 30 V, 8-Pin TSDSON Infineon BSZ050N03LSGATMA1
- N-Channel MOSFET 25 V, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1
- N-Channel MOSFET 150 V, 8-Pin TSDSON Infineon BSZ520N15NS3GATMA1
- Silicon N-Channel MOSFET 60 V, 8-Pin TSDSON-8 FL Infineon BSZ068N06NSATMA1
- N-Channel MOSFET Transistor 100 V, 8-Pin TSDSON Infineon ISZ230N10NM6ATMA1