onsemi Isolated 2 Type N-Channel Power MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC NTMD4N03R2G
- RS Stock No.:
- 780-0674
- Mfr. Part No.:
- NTMD4N03R2G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
€4.95
(exc. VAT)
€6.09
(inc. VAT)
Limited stock
- 2,500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | €0.495 | €4.95 |
| 100 - 240 | €0.427 | €4.27 |
| 250 - 490 | €0.37 | €3.70 |
| 500 - 990 | €0.325 | €3.25 |
| 1000 + | €0.296 | €2.96 |
*price indicative
- RS Stock No.:
- 780-0674
- Mfr. Part No.:
- NTMD4N03R2G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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