Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

RS Stock No.:: 827-5120
Mfr. Part No.:: IPD30N08S2L21ATMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1

Subtotal (1 pack of 25 units)*

€25.20

(exc. VAT)

€31.00

(inc. VAT)

In Stock

2,400 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 +	€1.008	€25.20

*price indicative

RS Stock No.:: 827-5120
Mfr. Part No.:: IPD30N08S2L21ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	56nC
	Maximum Power Dissipation Pd	136W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 56nC
	Maximum Power Dissipation Pd 136W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

RoHS Status: Not Applicable

Infineon OptiMOS Series MOSFET, 75V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N08S2L21ATMA1

This MOSFET is a power switching transistor designed for demanding electronic systems, providing controlled conduction between drain and source in N-channel enhancement-mode configurations. It is intended for surface-mount assembly in compact power designs and for use where elevated operating temperatures and automotive-grade qualification are required.

Features and Benefits:

• 75V drain voltage enabling robust high-voltage switching
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes

Applications

• Suitable for automotive DC-DC converter stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles

What packaging type should designers expect for PCB layout?

The device is supplied in a TO-252 package intended for surface mounting, which affects land-pattern and thermal-pad design.

How does the device handle extreme ambient conditions?

It is rated to operate across a wide temperature span from -55°C up to 175°C to suit high-temperature environments.

What gate-drive considerations are required for control circuitry?

The maximum gate-source rating is ±20V

gate-drive circuits should limit excursions within this range and account for the 56nC typical gate charge when sizing drivers.

Are there specific thermal performance constraints to plan for?

With a maximum power dissipation of 136W, thermal management must consider conduction paths and board-level heat sinking to maintain junction limits.