N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

RS Stock No.:: 827-6113
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

Bulk discount available

Price Each (In a Pack of 5)**

€2.336

(exc. VAT)

€2.873

(inc. VAT)

25 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
5 - 20	€2.336	€11.68
25 - 45	€1.874	€9.37
50 - 120	€1.708	€8.54
125 - 245	€1.566	€7.83
250 +	€1.404	€7.02

**price indicative

RS Stock No.:: 827-6113
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

TK12E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4.45mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	10.16mm
Maximum Operating Temperature	+150 °C
Height	15.1mm

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

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